型号:IPB60R950C6 | 类别:FET - 单 | 制造商:Infineon Technologies |
封装:TO-263-3,D²Pak(2 引线+接片),TO-263AB | 描述:MOSFET N-CH 600V 4.4A TO263 |
详细参数
类别 | FET - 单 |
---|---|
描述 | MOSFET N-CH 600V 4.4A TO263 |
系列 | CoolMOS™ |
制造商 | Infineon Technologies |
FET型 | MOSFET N 通道,金属氧化物 |
FET特点 | 标准 |
漏极至源极电压(Vdss) | 600V |
电流_连续漏极(Id)0a025000C | 4.4A |
开态Rds111最大2220a0IdwwwwVgs0a025000C | 950 毫欧 @ 1.5A,10V |
Id时的Vgs(th)111最大222 | 3.5V @ 130µA |
闸电荷(Qg)0a0Vgs | 13nC @ 10V |
输入电容(Ciss)0a0Vds | 280pF @ 100V |
功率_最大 | 37W |
安装类型 | 表面贴装 |
封装/外壳 | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装 | PG-TO263-2 |
包装 | 带卷 (TR) |
供应商
深圳市芯脉实业有限公司 | 骆0755-84507209 |
现代芯城(深圳)科技有限公司 | 董0755-82542579 |
深圳市芯柏然科技有限公司 | 欧阳0755-82533534 |
芯惠(深圳)电子科技有限公司 | 肖0755-82525087 |
深圳市鹏顺兴科技有限公司 | 谭小姐0755-23063133/83238712 |
深圳信泰电子器材有限公司 | 廖先生0755-83242658 |
深圳市源丰诚电子科技有限公司 | 朱先生0755-23919407 |
深圳市捷富芯科技有限公司 | 林生13686489274 |
深圳市科思奇电子科技有限公司 | 林小姐/朱先生0755-83245050/82785939 |
深圳市华斯顿电子科技有限公司 | 朱咸华0755-83777708/83777607/82799993 |
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